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May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Pb Free/RoHS Compliant
ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S
G
SOT-323
Marking : 7KW
Absolute Maximum Ratings *
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Value
60
±20
Units
V
V
I D
Maximum Drain Current
- Continuous
T J = 100 ° C
- Pulsed
310
195
1.2
mA
mA
A
T J
T STG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
° C
° C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P D
R θ JA
Parameter
Total Device Dissipation
Derating above T A = 25°C
Thermal Resistance, Junction to Ambient *
Value
300
2.4
410
Units
mW
mW/ ° C
° C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
? 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
1
www.fairchildsemi.com
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